elektronische bauelemente SMS2310 3a, 60v, r ds(on) 105m ? n-channel enhancement mosfet 13-dec-2013 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. top view a l c b d g h j f k e 1 2 3 1 2 3 sot - 23 s10 top view rohs compliant product a suffix of -c specifies halogen & lead-free features low on-resistance low gate threshold voltage low input capacitance fast switching speed low input/output leakage application battery switch dc/dc converter marking package information package mpq leader size sot-23 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v dss 60 v continuous gate-source voltage v gss 20 v continuous drain current i d 3 a pulsed drain current 1 i dm 10 a power dissipation p d 0.35 w thermal resistance, junction to ambient 2 r ja 357 c/w junction and storage temperature range t j , t stg 150, -55~150 c millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50
elektronische bauelemente SMS2310 3a, 60v, r ds(on) 105m ? n-channel enhancement mosfet 13-dec-2013 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static characteristics drain-source breakdown voltage v (br)dss 60 - - v v gs = 0, i d = 250 a gate-body leakage current i gss - - 100 na v gs =20v, v ds =0 zero gate voltage drain current i dss - - 1 a v gs =0, v ds =60v gate threshold voltage 3 v gs(th) 0.5 - 2 v v ds = v gs , i d = 250 a - - 105 v gs =10v, i d =3a static drain-source on resistance 3 r ds(on) - - 125 m v gs =4.5v, i d =3a forward transconductance 3 g fs 1.4 - - s v ds =15v,i d =2a body diode forward voltage 3 v sd - - 1.2 v v gs =0, i s =3a dynamic characteristics 4 input capacitance c iss - 247 - output capacitance c oss - 34 - reverse transfer capacitance c rss - 19.5 - pf v ds =30v, v gs =0, f=1mhz switching characteristics 4 turn-on delay time td (on) - 6 - rise time tr - 15 - turn-off delay time td (off) - 15 - fall time tr - 10 - ns v dd =30v, v gs =10v, i d =1.5a, r gen =1 , total gate charge q g - 6 - gate-source charge q gs - 1 - gate-drain charge q gd - 1.3 - nc i d = 3a v ds = 30v v gs = 4.5v notes: 1. repetitive rating : pulse width limited by jun ction temperature. 2. surface mounted on fr4 board , t 10s. 3. pulse test : pulse width 300s, duty cycle 0.5%. 4. guaranteed by design, not subject to productin g.
elektronische bauelemente SMS2310 3a, 60v, r ds(on) 105m ? n-channel enhancement mosfet 13-dec-2013 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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